Dynamic Random Access Memory (DRAM), a critical component in modern computing systems, relies heavily on the structural integrity of its active area (AA) - a fin-shaped transistor region responsible ...

Use left and right arrow keys to seek audio. SK hynix is reportedly using the EUV process in the development of its next-gen DRAM, with its 1c DRAM (6th-generation 10nm-class) for which transitional ...

Micron Technology, Inc., has announced production sampling of its new 1Gb DDR2 device fabricated on 68-nanometer (nm) DRAM process technology. The new process, coupled with Micron’s 6F² technology, ...

Samsung Electronics and SK hynix are taking sharply different approaches in their bid to lead the 10-nanometer-class sixth-generation DRAM segment (1c, 11–12 nanometer-class), the latest battleground ...

Samsung first adopted EUV lithography for its 7nm process in 2018 and later expanded the technology to DRAM manufacturing in 2020, both global firsts. By contrast, TSMC (2330.TW) plans to continue ...

Applied Materials AMAT is seeing improving conditions in the Dynamic Random Access Memory (DRAM) market, which could support its next phase of growth. While overall spending on semiconductor equipment ...

Samsung Electronics is reportedly preparing to convert portions of its NAND flash production lines in Pyeongtaek and Hwaseong into DRAM facilities as the company races to meet surging demand for ...

AI workloads are pushing the boundaries of compute, memory, and interconnect architectures, and to meet these goals, manufacturers are rapidly accelerating advanced logic and DRAM development. Chief ...