Using a new fabrication technique, engineers have developed a diamond field-effect transistor (FET) with high hole mobility, which allows reduced conduction loss and higher operational speed. This new ...

High electron mobility transistors (HEMTs) represent a critical evolution in semiconductor technology by harnessing the advantages of wide bandgap materials such as gallium nitride (GaN) to achieve ...

The trade-off between carrier mobility and stability in amorphous oxide semiconductor-based thin film transistors (TFTs) has been finally overcome by researchers in an ingeniously fabricated indium ...

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

With the same electrical characteristics, such as breakdown voltage, on-resistance and maximum current, vertical conduction power devices based on gallium nitride require a smaller die surface than ...

This new FET also exhibits normally-off behavior (i.e., electric current flow through the transistor ceases when no gate voltage is applied, a feature that makes electronic devices safer). These ...

High electron mobility transistors (HEMTs) have emerged as pivotal devices in the field of electronic sensing owing to their intrinsic ability to support a high-mobility two‐dimensional electron gas.

Amorphous oxide semiconductors (AOS) are a promising option for the next generation of display technologies due to their low costs and high electron (charge carrier) mobility. The high mobility, in ...