Spin-orbit transfer magnetic random-access memory (SOT-MRAM) is becoming more visible in next-generation memory offerings for its faster write speeds and much longer endurance. Two recent ...
A new technical paper titled “SOT-MRAM Bitcell Scaling with BEOL Read Selectors: A DTCO Study” was published by researchers at imec, Leuven, and 3001 Belgium. “This work explores the cross-node ...
The semiconductor industry is on the brink of a significant advancement with the latest collaboration between the Industrial Technology Research Institute (ITRI) and Taiwan Semiconductor Manufacturing ...
A new technical paper titled “Comprehensive device to system co-design for SOT-MRAM at the 7nm node” was published by researchers at Georgia Institute of Technology and Intel. “This work presents a ...
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